| PART |
Description |
Maker |
| NX6309GH NX6309GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX5311 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
|
California Eastern Laboratories
|
| NX6406 NX6406GH-AZ NX6406GK-AZ |
NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 邻舍1490纳米InGaAsP多量子阱激光器激光二极管能为光纤到户无源光网络应用工具包
|
California Eastern Laboratories, Inc.
|
| NX6314EH |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
California Eastern Labs
|
| NX5501EK-AZ NX5501 NX5501EH-AZ |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
CEL[California Eastern Labs]
|
| NX5501 NX5501EH-AZ NX5501EK-AZ |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
California Eastern Laboratories
|
| FTM-9412P-F20 |
2x5 SFF GE-PON ONU Transceiver
|
Fiberxon
|
| VSC7716 |
1.25 Gbps Burst Mode Transimpedance Amplifier for GE-PON (EPON) Systems
|
Vitesse Semiconductor Corporation
|
| FTM-9412P-F10 FTM-9412P-F10DC FTM-9412P-F10E FTM-9 |
(FTM-9412P-x10xx) SFF GE-PON Px10 ONU Transceiver
|
Fiberxon
|
| SBH52414XFSAN |
BIDI TM Transceiver Optical Module for ATM-PON ONU Applications,
|
Infineon
|
| NX6240GP |
1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
California Eastern Labs
|
